New quantum dots for quantum networks

Scientists from The Institute of Scientific and Industrial Research (SANKEN) at Osaka University, in collaboration with the Canadian National Research Council (NRC), developed a gallium arsenide (GaAs) quantum dot that can trap individual electrons. By controlling the crystallographic orientation of the substrate, the research team hopes to optimize the conversion of photons into spin-polarized electrons. This work may help make quantum networks more practical, especially for encrypting secure data.