Establishing an elemental structure that facilitates high-intensity broadband spin waves

A research team including Assistant Professor Taichi Goto of Toyohashi University of Technology has conducted simulations to demonstrate that using a substrate that combines the semiconductor silicon (Si) and the magnetic insulator yttrium iron garnet (YIG) can realize an element that facilitates excitation and detection of high-intensity broadband spin waves, even when miniaturized like chips. It is hoped that spin waves can be used in next-generation ultra-low energy consumption devices because they transmit through magnetic insulators that do not let electric currents through. At the same time, it is thought that it can be combined with generally and widely used semiconductor devices, and this research may serve as an indicator for substrate technology and material development that have that aim.